AUIRLL2705 Datasheet - International Rectifier

AUIRLL2705, Power MOSFET

AUTOMOTIVE GRADE AUIRLL2705 .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

Features

* l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

AUIRLL2705-InternationalRectifier.pdf