IRF1104LPBF - (IRF1104S/LPBF) HEXFET Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF1104LPBF
Manufacturer	International Rectifier ↗
File Size	472.91 KB
Description	(IRF1104S/LPBF) HEXFET Power MOSFET
Datasheet	IRF1104LPBF_InternationalRectifier.pdf

IRF1104LPBF Product details

Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of app

Features

y Duty Factor "D" D. U. T. - Device Under Test + V DD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Published: Jul 27, 2006 |