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IRF1104LPBF

(IRF1104S/LPBF) HEXFET Power MOSFET

IRF1104LPBF Features

* y Duty Factor "D" D.U.T. - Device Under Test + V DD et4U.com DataShee DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Ind

IRF1104LPBF General Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th.

IRF1104LPBF Datasheet (472.91 KB)

Preview of IRF1104LPBF PDF

Datasheet Details

Part number:

IRF1104LPBF

Manufacturer:

International Rectifier

File Size:

472.91 KB

Description:

(irf1104s/lpbf) hexfet power mosfet.
www.DataSheet4U.com PD - 95526 IRF1104S/LPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profi.

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TAGS

IRF1104LPBF IRF1104S LPBF HEXFET Power MOSFET International Rectifier

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