IRF1104L

(IRF1104L/S) HEXFET Power MOSFET

International Rectifier

IRF1104L Features

* D.U.T. - Device Under Test + V DD DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop

IRF1104L General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF1104L Datasheet (361.78 KB)

IRF1104L Datasheet Preview — Preview of IRF1104L PDF

Datasheet Details

Part number:

IRF1104L

Manufacturer:

International Rectifier

File Size:

361.78 KB

Description:

(irf1104l/s) hexfet power mosfet.
www.DataSheet4U.com PD -91845 IRF1104S/L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1.

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IRF1104L IRF1104L HEXFET Power MOSFET International Rectifier

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IRF1104L Features

IRF1104L General Description

Datasheet Details

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