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IRF1104L - (IRF1104L/S) HEXFET Power MOSFET

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • D. U. T. - Device Under Test + V DD DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD DataSheet4U. com.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Datasheet Details

Part number IRF1104L
Manufacturer International Rectifier
File Size 361.78 KB
Description (IRF1104L/S) HEXFET Power MOSFET
Datasheet download datasheet IRF1104L Datasheet
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www.DataSheet4U.com PD -91845 IRF1104S/L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS(on) = 0.009Ω G ID = 100A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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