IRF1104L (IRF1104L/S) HEXFET Power MOSFET

International Rectifier

Description

www.DataSheet4U.com PD -91845 IRF1104S/L HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRF1104L
Manufacturer: International Rectifier
File Size: 361.78 KB
Datasheet: IRF1104L_InternationalRectifier.pdf
Description: (IRF1104L/S) HEXFET Power MOSFET

Features

* D. U. T. - Device Under Test + V DD DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V
* D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop

Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because DataSheet4U. com of its low int

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IRF1104L IRF1104L HEXFET Power MOSFET International Rectifier

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