IRF1104L - (IRF1104L/S) HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF1104L
Manufacturer	International Rectifier
File Size	361.78 KB
Description	(IRF1104L/S) HEXFET Power MOSFET
Datasheet	IRF1104L_InternationalRectifier.pdf

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

D. U. T. - Device Under Test + V DD DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD DataSheet4U. com.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📁 IRF1104L Similar Datasheet

Other Datasheets by International Rectifier

Published: Jul 27, 2006 |