IRF1104S
International Rectifier
361.78kb
(irf1104l/s) hexfet power mosfet. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p
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IRF1104 - Power MOSFET
(International Rectifier)
PD- 9.1724A
PRELIMINARY
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IRF1104
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C O.
IRF1104 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1104, IIRF1104
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤9.0mΩ ·Enhancement m.
IRF1104L - (IRF1104L/S) HEXFET Power MOSFET
(International Rectifier)
..
PD -91845
IRF1104S/L
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1.
IRF1104LPBF - (IRF1104S/LPBF) HEXFET Power MOSFET
(International Rectifier)
..
PD - 95526
IRF1104S/LPbF
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Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profi.
IRF1104SPBF - (IRF1104S/LPBF) HEXFET Power MOSFET
(International Rectifier)
..
PD - 95526
IRF1104S/LPbF
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Advanced Process Technology Ultra Low On-Resistance Surface Mount (IRF1104S) Low-profi.
IRF100 - HIGH POWER WIRE WOUND RESISTORS
(ETC)
POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Application.
IRF100B201 - Power MOSFET
(International Rectifier)
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRF100B201 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF100B201, IIRF100B201
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.2mΩ ·Enhance.
IRF100B202 - Power MOSFET
(International Rectifier)
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRF100B202 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF100B202,IIRF100B202
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.6mΩ ·Enhancement mode ·Fast Switchin.