IRF3704ZS Datasheet - International Rectifier

IRF3704ZS HEXFET Power MOSFET

www.DataSheet4U.com PD - 94756 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRF3704Z IRF3704ZS IRF3704ZL Qg 8.7nC VDSS RDS(on) max 20V 7.9m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3704Z D2Pak IRF3704ZS TO-262 IRF3704ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-.

IRF3704ZS Features

* loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig

IRF3704ZS Datasheet (323.18 KB)