IRF3717PBF Datasheet - International Rectifier

IRF3717PBF HEXFET Power MOSFET

PD - 95719 IRF3717PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current www.DataSheet4U.com VDSS 20V 4.4m:@VGS = 10V A A D D D D RDS(on) max ID 20A S S S G 1 8 7 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @.

IRF3717PBF Features

* Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change

IRF3717PBF Datasheet (213.98 KB)