* Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change
IRF3717PBF Datasheet (213.98 KB)
IRF3717PBF
International Rectifier
213.98 KB
Hexfet power mosfet.
PD - 95719
IRF3717PbF
HEXFET® Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated.
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