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IRF3805S-7PPbF - Power MOSFET

IRF3805S-7PPbF Description

IRF3805S-7PPbF IRF3805L-7PPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

IRF3805S-7PPbF Applications

* HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 2.6mΩ‰ S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID = 160A D2Pak 7 Pin IRF3805S-7PPbF TO-263CA 7 Pin IRF3805L-7PPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V

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