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IRF3808L - N-Channel MOSFET

IRF3808L Description

Isc N-Channel MOSFET Transistor *.

IRF3808L Features

* With To-262 package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF3808L Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 106 75 A IDM Drain Current-Single Pulsed 550 A PD Total Dissipation @TC=25℃ 20

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Datasheet Details

Part number
IRF3808L
Manufacturer
INCHANGE
File Size
252.34 KB
Datasheet
IRF3808L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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