IRF3808SPBF Datasheet - International Rectifier

IRF3808SPBF AUTOMOTIVE MOSFET

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

IRF3808SPBF Features

* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot

IRF3808SPBF_InternationalRectifier.pdf