* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot
IRF3808S Datasheet (161.58 KB)
IRF3808S
International Rectifier
161.58 KB
Power mosfet.
PD - 94338A
AUTOMOTIVE MOSFET
Typical Applications
q q
IRF3808S IRF3808L
HEXFET® Power MOSFET
D
Integrated Starter Alternator 42 Volts Automotive E.
📁 Related Datasheet
IRF3808 Power MOSFET (International Rectifier)
IRF3808 N-Channel MOSFET (INCHANGE)
IRF3808L Power MOSFET (International Rectifier)
IRF3808L N-Channel MOSFET (INCHANGE)
IRF3808LPBF (IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET (International Rectifier)
IRF3808PBF HEXFET Power MOSFET (International Rectifier)
IRF3808S N-Channel MOSFET (INCHANGE)
IRF3808S N-Channel MOSFET (Kexin)
IRF3808SPBF AUTOMOTIVE MOSFET (International Rectifier)
IRF3805 Power MOSFET (International Rectifier)
