IRF3808S Features
* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot
IRF3808L_InternationalRectifier.pdf
Datasheet Details
IRF3808S, IRF3808L
International Rectifier
161.58 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRF3808S, IRF3808L.
Please refer to the document for exact specifications by model.
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IRF3808S Distributor
