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IRF3808PBF

HEXFET Power MOSFET

IRF3808PBF Features

* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot

IRF3808PBF General Description

www.DataSheet4U.com Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re.

IRF3808PBF Datasheet (239.23 KB)

Preview of IRF3808PBF PDF

Datasheet Details

Part number:

IRF3808PBF

Manufacturer:

International Rectifier

File Size:

239.23 KB

Description:

Hexfet power mosfet.
PD - 94972 AUTOMOTIVE MOSFET Typical Applications
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* IRF3808PbF HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automo.

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IRF3808PBF HEXFET Power MOSFET International Rectifier

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