IRF3808LPBF

(IRF3808SPBF / IRF3808LPBF) AUTOMOTIVE MOSFET

International Rectifier

IRF3808LPBF Features

* of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of ot

IRF3808LPBF General Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

IRF3808LPBF Datasheet (352.86 KB)

IRF3808LPBF Datasheet Preview — Preview of IRF3808LPBF PDF

Datasheet Details

Part number:

IRF3808LPBF

Manufacturer:

International Rectifier

File Size:

352.86 KB

Description:

(irf3808spbf / irf3808lpbf) automotive mosfet.
( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications
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* IRF3808SPbF IRF3808LPbF D Integrated Start.

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IRF3808LPBF IRF3808SPBF IRF3808LPBF AUTOMOTIVE MOSFET International Rectifier

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IRF3808LPBF Features

IRF3808LPBF General Description

Datasheet Details

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Description:

IRF3808LPBF Distributor