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IRF3808S N-Channel MOSFET

IRF3808S Description

Isc N-Channel MOSFET Transistor IRF3808S *.

IRF3808S Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF3808S Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 106 75 550 PD Total Dissipation @TC=25℃ 200 Tch Max. Operating J

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Datasheet Details

Part number
IRF3808S
Manufacturer
INCHANGE
File Size
254.34 KB
Datasheet
IRF3808S-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF3808S-like datasheet