IRF5806 Power MOSFET

International Rectifier

Description

PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(.
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

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Datasheet Specifications

Part number: IRF5806
Manufacturer: International Rectifier
File Size: 218.26 KB
Datasheet: IRF5806_InternationalRectifier.pdf
Description: Power MOSFET

Features

* Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.10/00 8 www. irf. com

Applications

* D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximu

IRF5806 Distributors

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IRF5806 Power MOSFET International Rectifier

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