IRF5806

Power MOSFET

International Rectifier

IRF5806 Features

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IRF5806 General Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely.

IRF5806 Datasheet (218.26 KB)

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Datasheet Details

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IRF5806

Manufacturer:

International Rectifier

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218.26 KB

Description:

Power mosfet.
PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(.

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IRF5806 Power MOSFET International Rectifier

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IRF5806 Features

IRF5806 General Description

Datasheet Details

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