IRF5N3205 Datasheet - International Rectifier

IRF5N3205 Power MOSFET

PD - 94302A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3205 55V, N-CHANNEL Product Summary Part Number IRF5N3205 BVDSS 55V RDS(on) 0.008Ω ID 55A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extre.

IRF5N3205 Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF5N3205 Datasheet (118.77 KB)