IRF5NJ3315 Datasheet - International Rectifier

IRF5NJ3315 Power MOSFET

PD - 94287A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number IRF5NJ3315 BVDSS 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extre.

IRF5NJ3315 Features

* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt

IRF5NJ3315 Datasheet (115.39 KB)