IRF5NJ540 Datasheet - International Rectifier

IRF5NJ540 Power MOSFET

PD - 94020A HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRF5NJ540 BVDSS IRF5NJ540 100V, N-CHANNEL 100V RDS(on) 0.052Ω ID 22A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an ex.

IRF5NJ540 Features

* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt T

IRF5NJ540 Datasheet (115.45 KB)