IRF5NJ5305 Datasheet (International Rectifier)

IRF5NJ5305, Power MOSFET

PD - 94033 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number IRF5NJ5305 BVDSS -55V RDS(on) 0.065Ω ID -22A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an

IRF5NJ5305 Features

* n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt