IRF5Y6215CM Datasheet - International Rectifier

IRF5Y6215CM Power MOSFET

PD - 94165 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number IRF5Y6215CM BVDSS -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extre.

IRF5Y6215CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Contin

IRF5Y6215CM Datasheet (103.24 KB)