IRF5YZ48CM Datasheet - International Rectifier

IRF5YZ48CM Power MOSFET

PD - 94019A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5YZ48CM 55V, N-CHANNEL Product Summary Part Number IRF5YZ48CM BVDSS 55V RDS(on) 0.029Ω ID 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr.

IRF5YZ48CM Features

* n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuo

IRF5YZ48CM Datasheet (105.85 KB)