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IRF7105 Power MOSFET

IRF7105 Description

l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet S1 l Surface Mount G1 l Available in Tape & Reel l Dynami.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRF7105 Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

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