* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provid
IRF7105QPBF Datasheet (607.54 KB)
IRF7105QPBF
International Rectifier
607.54 KB
Power mosfet.
END OF LIFE PD - 96102B IRF7105QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Availab.
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