IRF7106 Datasheet - International Rectifier

IRF7106 Power MOSFET

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the d.

IRF7106 Features

* 0.20 10 0.10 0.05 0.02 1 PD M 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 N o te s: 1 . D u ty fa c to r D = t 1 / t 2 0.1 0.00001 2 . P e a k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Tr

IRF7106 Datasheet (158.66 KB)