Datasheet Specifications
- Part number
- IRF7106
- Manufacturer
- International Rectifier
- File Size
- 158.66 KB
- Datasheet
- IRF7106_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 9.1098B PRELIMINARY IRF7106 N-CHANNEL MOSFET 1 8 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel.
Features
* 0.20 10 0.10 0.05 0.02 1 PD M 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 N o te s: 1 . D u ty fa c to r D = t 1 / t 2 0.1 0.00001 2 . P e a k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective TrApplications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF7106 Distributors
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