IRF7107 HEXFET Power MOSFET

International Rectifier

Description

PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel .
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number: IRF7107
Manufacturer: International Rectifier
File Size: 179.95 KB
Datasheet: IRF7107_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Sec

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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IRF7107 HEXFET Power MOSFET International Rectifier

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