IRF7107 Datasheet - International Rectifier

IRF7107 HEXFET Power MOSFET

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the d.

IRF7107 Features

* PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Sec

IRF7107 Datasheet (179.95 KB)