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IRF7306 HEXFET Power MOSFET

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Description

PD - 9.1241C IRF7306 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Availabl.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number
IRF7306
Manufacturer
International Rectifier
File Size
113.69 KB
Datasheet
IRF7306_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO-8 E X A M P LE : T H IS IS A N IR F 7101 D A TE C O DE (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T C O D E (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF I E R LO G O F 7 1

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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