* of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provid
IRF7306QPBF Datasheet (234.60 KB)
IRF7306QPBF
International Rectifier
234.60 KB
Power mosfet.
END OF LIFE
PD - 96105B
IRF7306QPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface M.
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