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IRF7306QPBF Power MOSFET

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Description

END OF LIFE PD - 96105B IRF7306QPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface M.
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

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Applications

* The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2

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IRF7306QPBF Power MOSFET International Rectifier
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