IRF7331 Datasheet - International Rectifier

IRF7331 HEXFET Power MOSFET

S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 3 6 4 5 T o p V ie w SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V .

PD - 94225 IRF7331 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) max (mΩ) 30@VGS = 4.5V 45@VGS = 2.5V ID 7.0A 5.6A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The .

IRF7331 Features

* arket. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.7/01 www.irf.com 9

IRF7331 Datasheet (233.54 KB)