IRF7335D1 Datasheet, Diode, International Rectifier

PDF File Details

Part number:

IRF7335D1

Manufacturer:

International Rectifier

File Size:

241.14kb

Download:

📄 Datasheet

Description:

Dual fetky co-packaged dual mosfet plus schottky diode. The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for sw

IRF7335D1 Application

• Applications Advanced HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety o

TAGS

📁 Related Datasheet

IRF733 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF733 DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Vo.

IRF733 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF7331 - HEXFET Power MOSFET (International Rectifier)
PD - 94225 IRF7331 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(.

IRF7331PbF - HEXFET Power MOSFET (International Rectifier)
PD - 95266 IRF7331PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free .

IRF7331PbF-1 - HEXFET Power MOSFET (International Rectifier)
VDS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 20 V 30 mΩ 45 13 nC 7.0 A IRF7331TRPbF-1 HEXFET® Power MOSFET .

IRF7331TRPBF-1 - Power MOSFET (International Rectifier)
VDS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 20 V 30 mΩ 45 13 nC 7.0 A IRF7331TRPbF-1 HEXFET® Power MOSFET .

IRF7338 - HEXFET Power MOSFET (International Rectifier)
PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S.

IRF7338PBF - HEXFET Power MOSFET (International Rectifier)
PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead.

IRF730 - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig.

IRF730 - N-Channel Power MOSFET (STMicroelectronics)
IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d.