Datasheet Specifications
- Part number
- IRF7338
- Manufacturer
- International Rectifier
- File Size
- 218.31 KB
- Datasheet
- IRF7338_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
Description
PD - 94372C IRF7338 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S.
Features
* C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capacitance Vs. Drain-to-SourceApplications
* This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pacIRF7338 Distributors
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