IRF7338 Datasheet (International Rectifier)

IRF7338, HEXFET Power MOSFET

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual SO-8 has

IRF7338 Features

* C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capacitance Vs. Drain-to-Source