* C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capacitance Vs. Drain-to-Source
IRF7338
International Rectifier
218.31 KB
Hexfet power mosfet.
PD - 94372C
IRF7338
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
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