IRF7338PBF Datasheet - International Rectifier

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IRF7338PBF HEXFET Power MOSFET

PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead.
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic.

IRF7338PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7338PBF

Manufacturer:

International Rectifier

File Size:

250.52 KB

Description:

HEXFET Power MOSFET

Features

* e (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capa

Applications

* This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pac

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IRF7338PBF HEXFET Power MOSFET International Rectifier

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