IRF7342

Power MOSFET

International Rectifier

IRF7342 Features

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IRF7342 General Description

l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V RDS(on) = 0.105Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and.

IRF7342 Datasheet (136.94 KB)

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IRF7342

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International Rectifier

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136.94 KB

Description:

Power mosfet.
PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & .

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IRF7342 Power MOSFET International Rectifier

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IRF7342 Features

IRF7342 General Description

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