IRF7350 Datasheet - International Rectifier

IRF7350, Power MOSFET

PD - 94226B IRF7350 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1.
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis.

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Datasheet Details

Part number:

IRF7350

Manufacturer:

International Rectifier

File Size:

238.11 KB

Description:

Power MOSFET

Features

* and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to excee

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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