IRF7350 Datasheet - International Rectifier

IRF7350 - Power MOSFET

These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known fo.

IRF7350 Features

* and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to excee

IRF7350_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7350

Manufacturer:

International Rectifier

File Size:

238.11 KB

Description:

Power mosfet.

IRF7350 Distributor

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IRF7350 Power MOSFET International Rectifier