* and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to excee
IRF7350
International Rectifier
238.11 KB
Power mosfet.
PD - 94226B
IRF7350
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel
S1 G1.
📁 Related Datasheet
IRF7350PBF Power MOSFET (International Rectifier)
IRF7351PbF Power MOSFET (International Rectifier)
IRF7353D1 MOSFET / Schottky Diode (International Rectifier)
IRF7353D1PbF FETKY MOSFET / Schottky Diode (International Rectifier)
IRF7353D2PbF FETKY MOSFET / Schottky Diode (International Rectifier)
IRF730 PowerMOS transistor (NXP)
IRF730 N-Channel Power MOSFET (STMicroelectronics)
IRF730 N-Channel Power MOSFET (Intersil Corporation)
IRF730 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF730 N-Channel MOSFET (NTE)
