Datasheet Specifications
- Part number
- IRF7350PBF
- Manufacturer
- International Rectifier
- File Size
- 334.45 KB
- Datasheet
- IRF7350PBF_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
www.DataSheet4U.com PD - 95367 IRF7350PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl.
Features
* veforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed TjmaApplications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF7350PBF Distributors
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