* veforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjma
IRF7350PBF Datasheet (334.45 KB)
IRF7350PBF
International Rectifier
334.45 KB
Power mosfet.
www.DataSheet4U.com
PD - 95367
IRF7350PbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl.
📁 Related Datasheet
IRF7350 Power MOSFET (International Rectifier)
IRF7351PbF Power MOSFET (International Rectifier)
IRF7353D1 MOSFET / Schottky Diode (International Rectifier)
IRF7353D1PbF FETKY MOSFET / Schottky Diode (International Rectifier)
IRF7353D2PbF FETKY MOSFET / Schottky Diode (International Rectifier)
IRF730 PowerMOS transistor (NXP)
IRF730 N-Channel Power MOSFET (STMicroelectronics)
IRF730 N-Channel Power MOSFET (Intersil Corporation)
IRF730 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF730 N-Channel MOSFET (NTE)
