IRF7351PbF Datasheet - International Rectifier

IRF7351PbF Power MOSFET

Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF7351PbF HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 60V 17.8mΩ@VGS = 10V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C.

IRF7351PbF Features

* threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every sw

IRF7351PbF-InternationalRectifier.pdf