IRF7353D1
International Rectifier
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Mosfet / schottky diode. A 2 S 3 G 4 7 K 6 D 5 D Top View The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an inn
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IRF7353D1PbF - FETKY MOSFET / Schottky Diode
(International Rectifier)
PD - 95251A
IRF7353D1PbF
l Co-packaged HEXFET® Power MOSFET
and Schottky Diode l Ideal For Buck Regulator Applications
A
l N-Channel HEXFET
A
l.
IRF7353D2PbF - FETKY MOSFET / Schottky Diode
(International Rectifier)
PD- 95215A
IRF7353D2PbF
l Co-Pack HEXFET® Power MOSFET and
Schottky Diode
l Ideal For Buck Regulator Applications A
l N-Channel HEXFET power MOSF.
IRF7350 - Power MOSFET
(International Rectifier)
PD - 94226B
IRF7350
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel
S1 G1.
IRF7350PBF - Power MOSFET
(International Rectifier)
..
PD - 95367
IRF7350PbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl.
IRF7351PbF - Power MOSFET
(International Rectifier)
Applications
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters
l Low Power Motor Drive Systems
PD - 97436
IRF7351PbF
HEXFET® Power MOSFET.
IRF730 - PowerMOS transistor
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Philips Semiconductors
Product specification
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FEATURES
• Repetitive Avalanche Rated • Fast switching • Hig.
IRF730 - N-Channel Power MOSFET
(STMicroelectronics)
IRF730
N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET
General features
Type IRF730
VDSS 400V
RDS(on) <1Ω
ID 5.5A
■ Exceptional d.
IRF730 - N-Channel Power MOSFET
(Intersil Corporation)
IRF730
Data Sheet July 1999 File Number
1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
IRF730 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF730 - N-Channel MOSFET
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IRF730
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Type Package
D
Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating .