IRF7509

Power MOSFET

International Rectifier

IRF7509 Features

* A 0 0 2 4 6 F O R T E S T C IR C U IT S E E FIG U R E 9 8 10 12 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z t

IRF7509 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7509 Datasheet (217.18 KB)

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Datasheet Details

Part number:

IRF7509

Manufacturer:

International Rectifier

File Size:

217.18 KB

Description:

Power mosfet.
PD - 91270J IRF7509 HEXFET® Power MOSFET q q q q q q q Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC P.

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IRF7509 Power MOSFET International Rectifier

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IRF7509 Features

IRF7509 General Description

Datasheet Details

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