Datasheet Specifications
- Part number
- IRF7509
- Manufacturer
- International Rectifier
- File Size
- 217.18 KB
- Datasheet
- IRF7509_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 91270J IRF7509 HEXFET® Power MOSFET q q q q q q q Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC P.
Features
* A 0 0 2 4 6 F O R T E S T C IR C U IT S E E FIG U R E 9 8 10 12 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z tApplications
* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (IRF7509 Distributors
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