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IRF7601 Datasheet - International Rectifier

Power MOSFET

IRF7601 Features

* 66 ) 12.40 ( .488 ) NO TES : 1. CO NT RO LLING DIME NSIO N : M ILLIMET ER. 2. OUT LINE CON FO RMS T O EIA -481 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CAN

IRF7601 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7601 Datasheet (116.88 KB)

Preview of IRF7601 PDF

Datasheet Details

Part number:

IRF7601

Manufacturer:

International Rectifier

File Size:

116.88 KB

Description:

Power mosfet.
PD - 9.1261D IRF7601 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low.

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IRF7601 Power MOSFET International Rectifier

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