IRF7601 Datasheet - International Rectifier

IRF7601, Power MOSFET

PD - 9.1261D IRF7601 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

* 66 ) 12.40 ( .488 ) NO TES : 1. CO NT RO LLING DIME NSIO N : M ILLIMET ER. 2. OUT LINE CON FO RMS T O EIA -481 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CAN

Applications

* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

IRF7601_InternationalRectifier.pdf