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IRF7606

Power MOSFET

IRF7606 Features

* N O TE S : 1 . O U TLIN E CO N FO RM S TO E IA -4 81 & E IA -54 1. 2 . C O NTRO LLING DIM E NS IO N : M IL LIM E TER . 330 .00 (1 2.9 92) MA X . 14.4 0 ( .56 6 ) 12.4 0 ( .48 8 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2. O U T LIN E C O N F O R M S T O EIA -48 1 &

IRF7606 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7606 Datasheet (102.49 KB)

Preview of IRF7606 PDF

Datasheet Details

Part number:

IRF7606

Manufacturer:

International Rectifier

File Size:

102.49 KB

Description:

Power mosfet.
PD - 9.1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low.

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IRF7606 Power MOSFET International Rectifier

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