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IRF7606 Power MOSFET

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Description

PD - 9.1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* N O TE S : 1 . O U TLIN E CO N FO RM S TO E IA -4 81 & E IA -54 1. 2 . C O NTRO LLING DIM E NS IO N : M IL LIM E TER . 330 .00 (1 2.9 92) MA X . 14.4 0 ( .56 6 ) 12.4 0 ( .48 8 ) NO TE S : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R . 2. O U T LIN E C O N F O R M S T O EIA -48 1 &

Applications

* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

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