Datasheet Details
- Part number
- IRF7603
- Manufacturer
- International Rectifier
- File Size
- 113.90 KB
- Datasheet
- IRF7603_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF7603 Description
PD - 9.1262D IRF7603 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7603 Features
* 1 2 .9 92 ) MAX. 1 4 .4 0 ( . 56 6 ) 1 2 .4 0 ( . 48 8 ) NO TE S : 1. C O N T R O LL IN G D I M E N S IO N : M I LL IM E T ER . 2. O U T LIN E C O N F O R M S T O E IA -48 1 & E IA -54 1 . WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS:
IRF7603 Applications
* The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
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