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IRF7603

Power MOSFET

IRF7603 Features

* 1 2 .9 92 ) MAX. 1 4 .4 0 ( . 56 6 ) 1 2 .4 0 ( . 48 8 ) NO TE S : 1. C O N T R O LL IN G D I M E N S IO N : M I LL IM E T ER . 2. O U T LIN E C O N F O R M S T O E IA -48 1 & E IA -54 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS:

IRF7603 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7603 Datasheet (113.90 KB)

Preview of IRF7603 PDF

Datasheet Details

Part number:

IRF7603

Manufacturer:

International Rectifier

File Size:

113.90 KB

Description:

Power mosfet.
PD - 9.1262D IRF7603 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low.

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IRF7603 Power MOSFET International Rectifier

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