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IRF7607 Power MOSFET

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Description

PD - 93845 PROVISIONAL IRF7607 HEXFET® Power MOSFET 1 8 Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET q Very Small SOIC Package q L.
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

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Features

* un Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www. irf. com

Applications

* The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (

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