IRF7607PBF

Power MOSFET

International Rectifier

IRF7607PBF General Description

New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely.

IRF7607PBF Datasheet (140.53 KB)

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IRF7607PBF

Manufacturer:

International Rectifier

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140.53 KB

Description:

Power mosfet.
PD - 95698 IRF7607PbF l Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available i.

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IRF7607PBF Power MOSFET International Rectifier

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IRF7607PBF General Description

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