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IRF7769L1TRPBF Power MOSFETs

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Description

l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l .
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state.

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Features

* 13 IRF7769L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C 10 TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Sou

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is opt

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