IRF7769L1TRPBF Datasheet - International Rectifier

IRF7769L1TRPBF Power MOSFETs

The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge.

l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified IRF7769L1TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS 100V min ±20V max Qg tot Qgd.

IRF7769L1TRPBF Features

* 13 IRF7769L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C 10 TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Sou

IRF7769L1TRPBF Datasheet (276.76 KB)