IRF7779L2PBF Datasheet - International Rectifier

IRF7779L2PBF Power MOSFET

The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layo.

l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified IRF7779L2PbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) 150V min ±20V max 9.0mΩ@.

IRF7779L2PBF Features

* l Gate Charge (nC) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Sing

IRF7779L2PBF Datasheet (280.60 KB)