Datasheet Details
- Part number
- IRF8852PBF
- Manufacturer
- International Rectifier
- File Size
- 310.95 KB
- Datasheet
- IRF8852PBF_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRF8852PBF Description
PD - 96246 IRF8852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Re.
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF8852PBF Features
* DPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃ6I9ÃDI8C@T "ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S #ÃÃÃ96UVHÃQG6I@ÃCÃDTÃGP86U@9Ã6TÃTCPXI $ÃÃÃ96UVHÃ6Ã6I9Ã7ÃUPÃ7@Ã9@U@SHDI@9Ã6UÃ96UVHÃQG6I@ÃC %ÃÃÃ9DH@ITDPITÃ9Ã6I9Ã@ Ã6S@ÃH@6TVS@9Ã6UÃ96UVHÃQG6I@ÃC &ÃÃÃ9DH@ITDPIÃGÃDTÃUC@ÃG@69ÃG@IBUCÃAPSÃTPG9@SDIBÃUPÃ6ÃTV7TUS6U@ 'ÃÃPVU
IRF8852PBF Applications
* where printed circuit board space is at a premium. The low profile (
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