Description
l l
D
VDSS = -60V RDS(on) = 0.50Ω
G S
ID = -6.7A
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2 Pak is a surface mount power package capable of
IRF9Z14S Datasheet
