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IRF9Z14S Datasheet - International Rectifier

IRF9Z14S Power MOSFET

l l D VDSS = -60V RDS(on) = 0.50Ω G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Po.

IRF9Z14S Datasheet (361.79 KB)

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Datasheet Details

Part number:

IRF9Z14S

Manufacturer:

International Rectifier

File Size:

361.79 KB

Description:

Power mosfet.

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IRF9Z14S Power MOSFET International Rectifier

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