IRF9Z34S Datasheet - International Rectifier

Power MOSFET

IRF9Z34S General Description

l D VDSS = -60V RDS(on) = 0.14Ω G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power.

IRF9Z34S Datasheet (334.68 KB)

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IRF9Z34S

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International Rectifier

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334.68 KB

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Power mosfet.
PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Oper.

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IRF9Z34S Power MOSFET International Rectifier

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IRF9Z34S General Description

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