IRFF430 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(Seme LAB)
2N6802 IRFF430
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N–CHANNEL ENHANCE.
IRFF430 - N-Channel Power MOSFET
(Intersil Corporation)
IRFF430
Data Sheet March 1999 File Number 1894.4
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power fie.
IRFF430 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[F~ IRFF430,431
FIELD EFFECT POVVER TRANSISTOR
2.75 AMPERES 500, 450 VOLTS
ROS(ON) =1.5 n
Preliminary
This series of N-Channel Enhancement-mode.
IRFF431 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[F~ IRFF430,431
FIELD EFFECT POVVER TRANSISTOR
2.75 AMPERES 500, 450 VOLTS
ROS(ON) =1.5 n
Preliminary
This series of N-Channel Enhancement-mode.
IRFF432 - FIELD EFFECT POWER TRANSISTOR
(GE)
~[R30~~LF IRFF432,433
FIELD EFFECT POVVER TRANSISTOR
2.25 AMPERES 500, 450 VOLTS
ROS(ON) =2.0 n
Preliminary
This series of N-Channel Enhancement-m.
IRFF433 - FIELD EFFECT POWER TRANSISTOR
(GE)
~[R30~~LF IRFF432,433
FIELD EFFECT POVVER TRANSISTOR
2.25 AMPERES 500, 450 VOLTS
ROS(ON) =2.0 n
Preliminary
This series of N-Channel Enhancement-m.