* Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (
IRFH4253DPbF Datasheet (327.56 KB)
IRFH4253DPbF
International Rectifier
327.56 KB
Power mosfet.
IRFH4253DPbF
HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.60 10 45 Q2 25 1.45 31 45 V m nC A
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IRFH4251DPbF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.60 10
45
Q2 25 1.10 44
45
V m nC A
Applications
Control and Synchronou.
IRFH4255DPBF - Power MOSFET
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VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.60 10
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V m nC A
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IRFH4257DPBF - Power MOSFET
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VDSS RDS(on) max (@VGS = 4.5V) Qg (typical)
ID (@TC = 25°C)
Q1 25 4.70 9.7
25
Q2 25 1.80 23
25
V m nC A
Applications
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IRFH4201 - Power MOSFET
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IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m.
IRFH4201PbF - Power MOSFET
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IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m.
IRFH4201PbF - Power MOSFET
(International Rectifier)
IRFH4201PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQF.
IRFH4209DPBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 1.10 1.35 36
100
V m nC A
Applications Synchronous.
IRFH4210DPbF - Power MOSFET
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FastIRFET™ IRFH4210DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 37.0 10.
