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IRFH5206PBF HEXFET Power MOSFET

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Description

PD -97466 www.DataSheet4U.com IRFH5206PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 60 6.7 40 1.7 89 V m : Qg (typical) RG (typical) ID .

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Features

* Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Easier Ma

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