Description
IRFH5220PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 200 99.9 20 2.3 20 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom).
Features
* Features Benefits
Low RDSon Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IR
Applications
* Secondary Side Synchronous Rectification
* Inverters for DC Motors
* DC-DC Brick Applications